dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 1 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct 12v p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c - 12 v 0.8 ? @ v gs = - 4.5 v - 0.2a 1.1 ? @ v gs = - 2 .5v 3.0 ? @ v gs = - 1 . 8 v 5 .0 ? @ v gs = - 1 . 5 v description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? power management functions ? p ortable power adaptors features ? 0.4mm u ltra l ow p rofile p ackage for t hin a pplication ? 0.48mm 2 p ackage f ootprint, 16 t imes s maller than sot23 ? low on - resistance ? low input capacitance ? esd protected gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free . green device (note 3) mechanical data ? case: x2 - dfn0806 - 3 ? case material: molded plastic, green molding compound . ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.00043 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dm p 1 555 uf a - 7 b x2 - dfn0806 - 3 10, 000 /tape & reel note s: 1 . no purposely adde d lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. h alogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/product s/packages.html . marking information 55 = product type marking code 55 top view bar denotes gate and source side internal s chematic bottom view x2 - dfn0806 - 3 t op view package pin configuration e4 d s g g ate protection diode
dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 2 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 12 v gate - source voltage v gss 8 continuous drain current ( v gs = - 4.5v ) (note 5 ) i d - 0. 2 a pulsed drain current (note 6 ) i dm - 1.5 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 0.36 w thermal resistance, junction to ambient ( note 5 ) r ? ja 353 c/w operating and storage temperature range t j, t stg - 55 to 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - sourc e breakdown voltage bv dss - 12 gs = 0v, i d = - 250a j = + 25c i dss a ds = - 1 0 v , v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold volta ge v gs(th) - 0.4 ds = v gs , i d = - 250 a ds (on) 0.4 0.8 gs = - 4.5 v, i d = - 0.2 a 0.55 1.1 v gs = - 2 .5 v, i d = - 0.1 a gs = - 1.8 v, i d = - 0.05 a 1.0 5.0 v gs = - 1.5 v, i d = - 0.01 a d iode forward voltage v sd gs = 0 v, i s = - 0.2 a dynamic characteristics (note 8 ) input capacitance c iss ds = - 10 v, v gs = 0v , f = 1mhz output capacitance c oss rss gs = 4.5 v ) q g ds = - 6 v, v gs = - 4.5 v , i d = - 0.2 a gate - source charge q gs gd d(on) dd = - 6 v, v gs = - 4.5 v, i d = - 0.2 a , r g = 6 r d(off) f notes: 5. device mounted on fr - 4 pcb, with minimum recommended pad layout. 6 . device mounted on minimum recommended pad layout test boa rd, 10s pulse duty cycle = 1%. 7. short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 3 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct t , junction temperature ( c) j ? figure 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -0.5a gs d v = -2.5v i = -0.2a gs d i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = a gs d -0.5 v = 5v i = a gs d -2. -0.2 v , drain -source voltage (v) ds figure 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 v = -1.0v gs v = -8.0v gs v = -4.5v gs v = -4.0v gs v = -3.0v gs v = -2.5v gs v = -1.2v gs v = -1.5v gs v = -1.8v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.01 v = -1.5v gs v = -2.5v gs v = -1.8v gs v = -4.5v gs
dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 4 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d v , drain-source voltage (v) ds figure 11 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(max) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 9 ypical junction capacitance ds 1 10 100 1000 0 2 4 6 8 10 12 c oss c rss c iss f = 1mhz v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a ? t = 150 c a ? t = -55 c a ? t = 85 c a ? t = 25 c a ? q , total gate charge (nc) figure 10 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v = -6v i = -0.2a ds d
dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 5 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x2 - dfn0806 - 3 dim min max typ a 0.375 0.40 0.39 a1 0 0.05 0.02 a3 - - 0.10 b 0.10 0.20 0.15 d 0.55 0.65 0.60 d1 0.35 0.45 0.40 e 0.75 0.85 0.80 e1 0.20 0.30 0.25 e - - 0.35 k - - 0.20 l 0.20 0.30 0.25 all dimensions in mm dimensions val ue (in mm) c 0.350 x 0.200 x1 0.450 x2 0.550 y 0.375 y1 0.475 y2 1.000 t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.1 d = 0.7 d = 0.5 d = 0.05 d = 0.3 d = 0.02 d = 0.01 d = 0.005 single pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 rthja(t)=r(t) * rthja rthja=447c/w duty cycle, d=t1 / t2 d = 0.9 d e b (2x) l (2x) e d1 e1 pin#1 r0.075 k a a3 seating plane a1 x1 x2 y2 y1 y (2x) x (2x) c
dm p 1 555 u fa document number : ds 37123 rev. 2 - 2 6 of 6 www.diodes.com september 2014 ? diodes incorporated dm p 1 555 uf a new prod uct important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporate d and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described he rein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warra nt or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. produc ts described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is wri tten in english but may be translated into multiple languages for reference. only the english version of this document is th e final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1 . are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.d iodes.com
|
